H. Van Cong, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F-66 860 Perpignan, France

P. Blaise, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F-66 860 Perpignan, France

O. Henri-Rousseau, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F-66 860 Perpignan, France

Abstract
The effects of heavy doping and acceptor (donor) size on the electron (hole)-minority saturation current density J_Eo (J_Bo ), injected respectively into the heavily (lightly) doped crystalline silicon (Si) emitter (base) region of p^+-n junction, which can be applied to determine the performance of solar cells, being strongly affected by the dark saturation current density: J_o≡J_Eo+J_Bo, were investigated. For that, we used an effective Gaussian acceptor-density profile to determine J_Eo, and an empirical method of two points to investigate the ideality factor n, short circuit current density J_sc, fill factor (FF), and photovoltaic conversion efficiency η, expressed as functions of the open circuit voltage V_oc, giving rise to a satisfactory description of our obtained results, being compared also with other existing theoretical-and-experimental ones. In particular, the highest η-value, obtained in the present paper is equal to: η(present)=27.56%, given in the condition of completely opaque and heavily doped (Tl-Si) emitter-and-lightly doped (S-Si) base regions, with the intrinsic band gap, E_gi (r_Tl )=1.34 eV, where r_Tl is the Tl-atom radius, while in our previous paper we got: η(previous)=31.55%, obtained in the condition of completely opaque and heavily doped (S-Si) emitter-and-lightly doped (Tl-Si) base regions, with E_gi (r_S )=1.70 eV>E_gi (r_Tl )=1.34 eV, where r_S is the S-atom radius. That is due to the impurity-size effect, because of r_S>r_Tl. Those results can be compared with a well-known highest η-value, obtained by Richter et al. (R), η(R)=29.43%, as: η(present)=27.56%<η(R)=29.43%<η(previous)=31.55%.

Keywords
donor (acceptor)-size effect; heavily doped emitter region; ideality factor; open circuit voltage; photovoltaic conversion efficiency

Cite this paper
H. Van Cong, P. Blaise, O. Henri-Rousseau, Effects of Heavy Doping and Impurity Size on Minority-Carrier Transport Parameters in Heavily (Lightly) Doped p^+ (n)-Type Crystalline Silicon at 300 K, Applied to Determine the Performance of p^+-n Junction Solar Cells , SCIREA Journal of Physics. Volume 4, Issue 5, October 2019 | PP. 126-162.

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